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| N-Channel JFET Monolithic Dual CORPORATION SST5912 FEATURES DESCRIPTION The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain (typically > 6000 mmhos), low leakage ( < 1pA typically) and low noise, The SST5912 is an excellent choice for differential wideband amplifiers, VHF/UHF amplifiers and test and measurement. ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC SST5912 Plastic SO-8 Package * High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS * Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical * Low Noise Package * Surface Mount * Differential Wideband Amplifier * VHF/UHF Amplifiers * Test and Measurement APPLICATIONS NOTE: For Sorted Chips in Carriers, See 2N5911 Series PIN CONFIGURATION SO-8 TOP VIEW (1) S1 (2) D1 (3) G1 (4) N/C N/C (8) G2 (7) D2 (6) S2 (5) CJ1 PRODUCT MARKING SST5912 SST5912 SST5912 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Gate-Drain Voltage Gate-Source Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Symbol VGD VGS IG PD Limit -25 -25 50 300 500 2.4 4 -55 to 150 -65 to 150 300 Unit V V mA mW mW mW/ oC mW/ oC o C o C o C TJ Tstg TL ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL STATIC V(BR)GSS VGS(OFF) IDSS IGSS IG VGS VGS(F) DYNAMIC gfs gos gfs gos Ciss Crss en NF MATCHING | VGS1 - VGS2 | Differential Gate Source Voltage 7 10 10 0.98 0.98 0.01 90 0.95 0.95 15 40 40 1 1 20 nA dB mV mV/ oC VDG = 10V, ID = 5mA T = -55 to 25oC T = 25 to 125 oC VDS = 10V, VGS = 0V VDG = 10V, ID = 5mA, f = 1kHz VDG = 10V, ID = 5mA, TA = 125oC VDD = 5 to 10V, ID = 5mA VDG = 10V ID = 5mA Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure 6 20 6 30 3.5 1 4 0.1 5 5 10 100 10 150 5 1.2 20 1 mS mS mS mS pF VDG = 10V, ID = 5mA f = 1kHz VDG = 10V, ID = 5mA f = 100MHz VDG = 10V, ID = 5mA f = 1MHz Gate-Source Breakdown Voltage Gate-Source Cut off Voltage Saturation Drain Current Gate Reverse Current Gate Operating Current Gate-Source Voltage Gate-Source Forward Voltage 2 CHARACTERISTCS TYP1 SST5912 MIN -25 -1 7 -5 40 -100 -100 -0.3 -4 MAX UNIT TEST CONDITIONS -35 -3.5 15 -1 -0.2 -1 -0.2 -1.5 0.7 V mA pA nA pA nA V IG = -1mA, VDS = 0V VDS = 10V, ID = 1nA VDS = 10V, VGS = 0V VGS = -15V, VDS = 0V TA = 125 oC VDG = 10V, ID = 5mA TA = 125 oC VDG = 10V, ID = 5mA IG = 1mA, VDS = 0V nV/ Hz VDG = 10V, ID = 5mA, f = 10kHz dB VDG = 10V, ID = 5mA, f = 10kHz, RG = 100W D | VGS1 - VGS2 | Gate Source Voltage Differential Change with Temperature DT IDSS1 IDSS2 gfs1 gfs2 | IG1 - IG2 | CMRR Saturation Drain Current Ratio Transconductance Ratio Differential Gate Current Common Mode Rejection Ratio NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300ms, duty cycle a 3%. |
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